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Dual RF LDMOS Bias Controller with
Nonvolatile Memory
ELECTRICAL CHARACTERISTICS (continued)
(V CS_+ = +32V, AV DD = DV DD = +5V ±5%, external V REFADC = +2.5V, external V REFDAC = +2.5V, C REF = 0.1μF, C GATE_ = 0.1nF,
V SENSE = V CS_+ - V CS_- , T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MONITOR ADC CONVERSION RATE
Power-Up Time (External
Reference)
Power-Up Time (Internal
Reference)
Acquisition Time
t PUEXT
t PUINT
t ACQ
1.1
70
0.5
μs
μs
μs
Conversion Time
Aperture Delay
t CONV
t AD
Internally clocked, T A = +25°C
20
10
μs
ns
MONITOR ADC ANALOG INPUT (ADCIN1, ADCIN2)
Input Voltage Range
V ADCIN
Relative to AGND (Note 7)
0
V REFADC
V
Input Leakage Current
Input Capacitance
C ADCIN
V IN = 0 and V IN = VAV DD
±0.01
34
μA
pF
TEMPERATURE MEASUREMENTS
Internal Sensor Measurement
Error
External Sensor Measurement
Error (Note 9)
Relative Temperature Accuracy
Temperature Resolution
External Diode Drive Current (Low)
External Diode Drive Current (High)
T A = +25°C
T A = T MIN to T MAX (Note 8)
T A = +25°C
T A = T MIN to T MAX
T A = T MIN to T MAX (Note 9)
3.25
±0.25
±1.5
±1
±3
±0.4
1/8
4
68
±3
75
°C
°C
°C
°C/LSB
μA
μA
INTERNAL REFERENCE
REFADC/REFDAC Output
Voltage
V REFADC ,
V REFDAC
T A = +25°C
2.49
2.50
2.51
V
REFADC/REFDAC Temperature
Coefficient
REFADC/REFDAC Output
Impedance
Capacitive Bypass at
REFADC/REFDAC
TC REFADC ,
TC REFDAC
270
±15
6.5
ppm/°C
k ?
pF
Power-Supply Rejection Ratio
PSRR
AV DD = 5V ± 5%
64
dB
EXTERNAL REFERENCE
REFADC Input Voltage Range
V REFADC
1.0
AV DD
V
REFADC Input Current
REFDAC Input Voltage Range
REFDAC Input Current
I REFADC
V REFDAC
V REFADC = 2.5V, f SAMPLE = 100ksps
Acquisition/between conversions
Static current when the DAC is not calibrated
0.7
60
±0.01
0.1
80
2.5
μA
V
μA
4
_______________________________________________________________________________________
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